2007~ 至今 工作在光电技术研究院 微波器件、二维晶体管、建模
(1) Cai, Fei, Guangsheng Deng, Xiangxiang Li, and Fujiang Lin. "Contact Resistance Parallel Model for Edge-Contacted 2D Material Back-Gate FET." Electronics 9, no. 12 (2020): 2110. (2)蔡斐，刘世中，谢东成等.基于高K值衬底材料的黑磷背栅晶体管[J]. 固体电子学研究与进展,36(6), pp 501-505,2016
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